Resonance circuit with a single crystal capacitor dielectric material

ABSTRACT

A single crystal acoustic electronic device. The device has a substrate having a surface region. The device has a first electrode material coupled to a portion of the substrate and a single crystal capacitor dielectric material having a thickness of greater than 0.4 microns and overlying an exposed portion of the surface region and coupled to the first electrode material. In an example, the single crystal capacitor dielectric material is characterized by a dislocation density of less than 10 12  defects/ cm 2 . A second electrode material is overlying the single crystal capacitor dielectric material.

CROSS-REFERENCES TO RELATED APPLICATIONS

The present application is a continuation of U.S. patent applicationSer. No. 14/298,057, filed Jun. 6, 2014, which incorporates byreference, for all purposes, the following concurrently filed patentapplications, all commonly owned: application Ser. No. 14/298,076(Attorney Docket No. A969RO-000200US) titled “METHOD OF MANUFACTURE FORSINGLE CRYSTAL CAPACITOR DIELECTRIC FOR A RESONANCE CIRCUIT”, filed Jun.6, 2014, and application Ser. No. 14/298,100 (Attorney Docket No.A969RO-000300US) titled “INTEGRATED CIRCUIT CONFIGURED WITH TWO OR MORESINGLE CRYSTAL ACOUSTIC RESONATOR DEVICES”, filed Jun. 6, 2014.

BACKGROUND OF THE INVENTION

The present invention relates generally to electronic devices. Moreparticularly, the present invention provides techniques related to asingle crystal acoustic resonator. Merely by way of example, theinvention has been applied to a resonator device for a communicationdevice, mobile device, computing device, among others.

Mobile telecommunication devices have been successfully deployedworld-wide. Over a billion mobile devices, including cell phones andsmartphones, were manufactured in a single year and unit volumecontinues to increase year-over-year. With ramp of 4G/LTE in about 2012,and explosion of mobile data traffic, data rich content is driving thegrowth of the smartphone segment—which is expected to reach 2B per annumwithin the next few years. Coexistence of new and legacy standards andthirst for higher data rate requirements is driving RF complexity insmartphones. Unfortunately, limitations exist with conventional RFtechnology that is problematic, and may lead to drawbacks in the future.

From the above, it is seen that techniques for improving electronicdevices are highly desirable.

BRIEF SUMMARY OF THE INVENTION

According to the present invention, techniques generally related toelectronic devices are provided. More particularly, the presentinvention provides techniques related to a single crystal acousticresonator. Merely by way of example, the invention has been applied to aresonator device for a communication device, mobile device, computingdevice, among others.

In an example, the present invention provides a single crystal capacitordielectric material configured on a substrate by a limited area epitaxy.The material is coupled between a pair of electrodes, which areconfigured from a topside and a backside of a substrate member, in anexample. In an example, the single crystal capacitor dielectric materialis provided using a metal-organic chemical vapor deposition, a molecularbeam epitaxy, an atomic layer deposition, a pulsed laser deposition, achemical vapor deposition, or a wafer bonding process. In an example,the limited area epitaxy is lifted-off the substrate and transferred toanother substrate. In an example, the material is characterized by adefect density of less than 1E+11 defects per square centimeter. In anexample, the single crystal capacitor material is selected from at leastone of AN, AlGaN, InN, BN, or other group III nitrides. In an example,the single crystal capacitor material is selected from at least one of asingle crystal oxide including a high K dielectric, ZnO, or MgO.

In an example, a single crystal acoustic electronic device is provided.The device has a substrate having a surface region. The device has afirst electrode material coupled to a portion of the substrate and asingle crystal capacitor dielectric material having a thickness ofgreater than 0.4 microns and overlying an exposed portion of the surfaceregion and coupled to the first electrode material. In an example, thesingle crystal capacitor dielectric material is characterized by adislocation density of less than 10¹² defects/cm². A second electrodematerial is overlying the single crystal capacitor dielectric material.

One or more benefits are achieved over pre-existing techniques using theinvention. In particular, the invention enables a cost-effectiveresonator device for communications applications. In a specificembodiment, the present device can be manufactured in a relativelysimple and cost effective manner. Depending upon the embodiment, thepresent apparatus and method can be manufactured using conventionalmaterials and/or methods according to one of ordinary skill in the art.The present device uses a gallium and nitrogen containing material thatis single crystalline. Depending upon the embodiment, one or more ofthese benefits may be achieved. Of course, there can be othervariations, modifications, and alternatives.

A further understanding of the nature and advantages of the inventionmay be realized by reference to the latter portions of the specificationand attached drawings.

BRIEF DESCRIPTION OF THE DRAWINGS

In order to more fully understand the present invention, reference ismade to the accompanying drawings. Understanding that these drawings arenot to be considered limitations in the scope of the invention, thepresently described embodiments and the presently understood best modeof the invention are described with additional detail through use of theaccompanying drawings in which:

FIG. 1 is a simplified diagram illustrating a surface single crystalacoustic resonator according to an example of the present invention.

FIG. 2 is a simplified diagram illustrating a bulk single crystalacoustic resonator according to an example of the present invention.

FIG. 3 is a simplified diagram illustrating a feature of a bulk singlecrystal acoustic resonator according to an example of the presentinvention.

FIG. 4 is a simplified diagram illustrating a piezo structure accordingto an example of the present invention.

FIG. 5 is a simplified diagram illustrating a piezo structure accordingto an alternative example of the present invention.

FIG. 6 is a simplified diagram illustrating a piezo structure accordingto an alternative example of the present invention.

FIG. 7 is a simplified diagram illustrating a piezo structure accordingto an alternative example of the present invention.

FIG. 8 is a simplified diagram illustrating a piezo structure accordingto an alternative example of the present invention.

FIG. 9 is a simplified diagram illustrating a piezo structure accordingto an alternative example of the present invention.

FIG. 10 is a simplified diagram illustrating a piezo structure accordingto an alternative example of the present invention.

FIG. 11 is a simplified diagram of a substrate member according to anexample of the present invention.

FIG. 12 is a simplified diagram of a substrate member according to anexample of the present invention.

FIG. 13 is a simplified table illustrating features of a conventionalfilter compared against the present examples according to examples ofthe present invention.

DETAILED DESCRIPTION OF THE INVENTION

According to the present invention, techniques generally related toelectronic devices are provided. More particularly, the presentinvention provides techniques related to a single crystal acousticresonator. Merely by way of example, the invention has been applied to aresonator device for a communication device, mobile device, computingdevice, among others.

As additional background, the number of bands supported by smartphonesis estimated to grow by 7-fold compared to conventional techniques. As aresult, more bands mean high selectivity filter performance is becominga differentiator in the RF front end of smartphones. Unfortunately,conventional techniques have severe limitations.

That is, conventional filter technology is based upon amorphousmaterials and whose electromechanical coupling efficiency is poor (only7.5% for non-lead containing materials) leading to nearly half thetransmit power dissipated in high selectivity filters. In addition,single crystal acoustic wave devices are expected to deliverimprovements in adjacent channel rejection. Since there are twenty (20)or more filters in present smartphone and the filters are insertedbetween the power amplifier and the antenna solution, then there is anopportunity to improve the RF front end by reducing thermal dissipation,size of power amplifier while enhancing the signal quality of thesmartphone receiver and maximize the spectral efficiency within thesystem.

Utilizing single crystal acoustic wave device (herein after “SAW”device) and filter solutions, one or more of the following benefits maybe achieved: (1) large diameter silicon wafers (up to 200 mm) areexpected to realize cost-effective high performance solutions, (2)electromechanical coupling efficiency is expected to more than triplewith newly engineered strained piezo electric materials, (3) Filterinsertion loss is expected to reduce by 1 dB enabling longer batterylife, improve thermal management with smaller RF footprint and improvingthe signal quality and user experience. These and other benefits can berealized by the present device and method as further provided throughoutthe present specification, and more particularly below.

FIG. 1 is a simplified diagram illustrating a surface single crystalacoustic resonator according to an example of the present invention.This diagram is merely an example, which should not unduly limit thescope of the claims. The present surface single crystal acousticresonator device 100 having a crystalline piezo material 120 overlying asubstrate 110 is illustrated. As shown, an acoustic wave propagates in alateral direction from a first spatial region to a second spatial regionsubstantially parallel to a pair of electrical ports 140, which form aninter-digital transducer configuration 130 with a plurality of metallines 131 that are spatially disposed between the pair of electricalports 140. In an example, the electrical ports on the left side can bedesignated for signal input, while the electrical ports on the rightside are designated for signal output. In an example, a pair ofelectrode regions are configured and routed to a vicinity of a planeparallel to a contact region coupled to the second electrode material.

In a SAW device example, surface acoustic waves produce resonantbehavior over a narrow frequency band near 880 MHz to 915 MHz frequencyband—which is a designated passband for a Europe, Middle East and Africa(EMEA) LTE enabled mobile smartphone. Depending on region of operationfor the communication device, there can be variations. For example, inNorth American transmit bands, the resonator can be designed such thatresonant behavior is near the 777 MHz to 787 MHz frequency passband.Other transmit bands, found in other regions, can be much higher infrequency, such as the Asian transmit band in the 2570 MHz to 2620 MHzpassband. Further, the examples provided here are for transmit bands. Insimilar fashion, the passband on the receiver side of the radio frontend also require similar performing resonant filters. Of course, therecan be variations, modifications, and alternatives.

Other characteristics of surface acoustic wave devices include thefundamental frequency of the SAW device, which is determined by thesurface propagation velocity (determined by the crystalline quality ofthe piezo-electric material selected for the resonator) divided by thewavelength (determined by the fingers in the interdigitated layout inFIG. 1). Measured propagation velocity (also referred to as SAWvelocity) in GaN of approximately 5800 m/s has been recorded, whilesimilar values are expected for AlN. Accordingly, higher SAW velocity ofsuch Group III-nitrides enables a resonator to process higher frequencysignals for a given device geometry.

Resonators made from Group III-nitrides are desirable as such materialsoperate at high power (leveraging their high critical electric field),high temperature (low intrinsic carrier concentration from their largebandgap) and high frequency (high saturated electron velocities). Suchhigh power devices (greater than 10 Watts) are utilized in wirelessinfrastructure and commercial and military radar systems to name a few.Further, stability, survivability and reliability of such devices arecritical for field deployment.

Further details of each of the elements provided in the present devicecan be found throughout the present specification and more particularbelow.

FIG. 2 is a simplified diagram illustrating a bulk single crystalacoustic resonator according to an example of the present invention.This diagram is merely an example, which should not unduly limit thescope of the claims. The present bulk single crystal acoustic resonatordevice 200 having a crystalline piezo material is illustrated. As shown,an acoustic wave propagates in a vertical direction from a first spatialregion to a second spatial region between an upper electrode material231 and a substrate member 210. As shown, the crystalline piezo material220 is configured between the upper (231) and lower (232) electrodematerial. The top electrode material 231 is configured underneath aplurality of optional reflector layers, which are formed overlying thetop electrode 231 to form an acoustic reflector region 240.

In a bulk acoustic wave (hereinafter “BAW”) device example, acousticwaves produce resonant behavior over a narrow frequency band near 3600MHz to 3800 MHz frequency band—which is a designated passband for a LTEenabled mobile smartphone. Depending on region of operation for thecommunication device, there can be variations. For example, in NorthAmerican transmit bands, the resonator can be designed such thatresonant behavior is near the 2000 MHz to 2020 MHz frequency passband.Other transmit bands, found in other regions such as the Asian transmitband in the 2500 MHz to 2570 MHz passband. Further, the examplesprovided here are for transmit bands. In similar fashion, the passbandon the receiver side of the radio front end also require similarperforming resonant filters. Of course, there can be variations,modifications, and alternatives.

Other characteristics of single crystal BAW devices include theelectromechanical acoustic coupling in the device, which isproportionate to the piezoelectricity constant (influence by the designand strain of the single crystal piezo layer) divided by the acousticwave velocity (influenced by scattering and reflections in the piezomaterial). Acoustic wave velocity in GaN of over 5300 m/s has beenobserved. Accordingly, high acoustic wave velocity of such GroupIII-nitrides enables a resonator to process higher frequency signals fora given device geometry.

Similar to SAW devices, resonators made from Group III-nitrides aredesirable as such materials operate at high power (leveraging their highcritical electric field), high temperature (low intrinsic carrierconcentration from their large bandgap) and high frequency (highsaturated electron velocities). Such high power devices (greater than 10Watts) are utilized in wireless infrastructure and commercial andmilitary radar systems to name a few. Further, stability, survivabilityand reliability of such devices are critical for field deployment.

Further details of each of the materials provided in the present devicecan be found throughout the present specification and more particularbelow.

In an example, the device has a substrate, which has a surface region.In an example, the substrate can be a thickness of material, acomposite, or other structure. In an example, the substrate can beselected from a dielectric material, a conductive material, asemiconductor material, or any combination of these materials. In anexample, the substrate can also be a polymer member, or the like. In apreferred example, the substrate is selected from a material providedfrom silicon, a gallium arsenide, an aluminum oxide, or others, andtheir combinations.

In an example, the substrate is silicon. The substrate has a surfaceregion, which can be in an off-set or off cut configuration. In anexample, the surface region is configured in an off-set angle rangingfrom 0.5 degree to 1.0 degree. In an example, the substrate is <111>oriented and has high resistivity (greater than 10³ ohm-cm). Of course,there can be other variations, modifications, and alternatives.

In an example, the device has a first electrode material coupled to aportion of the substrate and a single crystal capacitor dielectricmaterial having a thickness of greater than 0.4 microns. In an example,the single crystal capacitor dielectric material has a suitabledislocation density. The dislocation density is less than 10¹²defects/cm², and greater than 10⁴ defects per cm², and variationsthereof. The device has a second electrode material overlying the singlecrystal capacitor dielectric material. Further details of each of thesematerials can be found throughout the present specification and moreparticularly below.

In an example, the single crystal capacitor material is a suitablesingle crystal material having desirable electrical properties. In anexample, the single crystal capacitor material is generally a galliumand nitrogen containing material such as a AlN, AlGaN, or GaN, amongInN, InGaN, BN, or other group III nitrides. In an example, the singlecrystal capacitor material is selected from at least one of a singlecrystal oxide including a high K dielectric, ZnO, MgO, or alloys ofMgZnGaInO. In an example, the high K is characterized by a defectdensity of less than 10¹² defects/cm², and greater than 10⁴ defects percm². Of course, there can be other variations, modifications, andalternatives.

In an example, the single crystal capacitor dielectric material ischaracterized by a surface region at least 50 micron by 50 micron, andvariations. In an example, the surface region can be 200 micron×200 umor as high as 1000 um×1000 um. Of course, there are variations,modifications, and alternatives.

In an example, the single crystal capacitor dielectric material isconfigured in a first strain state to compensate to the substrate. Thatis, the single crystal material is in a compressed or tensile strainstate in relation to the overlying substrate material. In an example,the strained state of a GaN when deposited on silicon is tensilestrained whereas an AlN layer is compressively strain relative to thesilicon substrate.

In a preferred example, the single crystal capacitor dielectric materialis deposited overlying an exposed portion of the substrate. In anexample, the single crystal capacitor dielectric is lattice mismatchedto the crystalline structure of the substrate, and may be straincompensated using a compressively strain piezo nucleation layer such asAlN or SiN.

In an example, the device has the first electrode material is configuredvia a backside of the substrate. In an example, the first electrodematerial is configured via a backside of the substrate. Theconfiguration comprises a via structure configured within a thickness ofthe substrate.

In an example, the electrode materials can be made of a suitablematerial or materials. In an example, each of the first electrodematerial and the second electrode material is selected from a refractorymetal or other precious metals. In an example, each of the firstelectrode material and the second electrode material is selected fromone of tantalum, molybdenum, platinum, titanium, gold, aluminumtungsten, or platinum, combinations thereof, or the like.

In an example, the first electrode material and the single crystalcapacitor dielectric material comprises a first interface regionsubstantially free from an oxide bearing material. In an example, thefirst electrode material and the single crystal capacitor dielectricmaterial comprises a second interface region substantially free from anoxide bearing material. In an example, the device can include a firstcontact coupled to the first electrode material and a second contactcoupled to the second electrode material such that each of the firstcontact and the second contact are configured in a co-planararrangement.

In an example, the device has a reflector region configured to the firstelectrode material. In an example, the device also has a reflectorregion configured to the second electrode material. The reflector regionis made of alternating low impedance (e.g. dielectric) andhigh-impedance (e.g. metal) reflector layers, where each layer istargeted at one quarter-wave in thickness, although there can bevariations.

In an example, the device has a nucleation material provided between thesingle crystal capacitor dielectric material and the first electrodematerial. The nucleation material is typically AlN or SiN.

In an example, the device has a capping material provided between thesingle crystal capacitor dielectric material and the second electrodematerial. In an example, the capping material is GaN.

In an example, the single crystal capacitor dielectric materialpreferably has other properties. That is, the single crystal capacitordielectric material is characterized by a FWHM of less than one degree.

In an example, the single crystal capacitor dielectric is configured topropagate a longitudinal signal at an acoustic velocity of 5000meters/second and greater. In other embodiments where strain isengineered, the signal can be over 6000 m/s and below 12,000 m/s. Ofcourse, there can be variations, modifications, and alternatives.

The device also has desirable resonance behavior when tested using atwo-port network analyzer. The resonance behavior is characterized bytwo resonant frequencies (called series and parallel)—whereby oneexhibits an electrical impedance of infinity and the other exhibits animpedance of zero. In between such frequencies, the device behavesinductively. In an example, the device has s-parameter derived from atwo-port analysis, which can be converted to impedance. From s11parameter, the real and imaginary impedance of the device can beextracted. From s21, the transmission gain of the resonator can becalculated. Using the parallel resonance frequency along the known piezolayer thickness, the acoustic velocity can be calculated for the device.

FIG. 3 is a simplified diagram illustrating a feature of a bulk singlecrystal acoustic resonator according to an example of the presentinvention. This diagram is merely an example, which should not undulylimit the scope of the claims. As shown, diagram 300 shows the presentinvention applied as a band pass filter for RF signals. A specificfrequency range is allowed through the filter, as depicted by thedarkened block elevated from the RF spectrum underneath the wavelengthillustration. This block is matched to the signal allowed through thefilter in the illustration above. Single crystal devices can offerbetter acoustic quality versus BAW devices due to lower filter loss andrelieving the specification requirements on the power amplifier. Thesecan result benefits for devices utilizing the present invention such asextended battery, efficient spectrum use, uninterrupted callerexperience, and others.

FIG. 4 is a simplified diagram illustrating a piezo structure accordingto an example of the present invention. This diagram is merely anexample, which should not unduly limit the scope of the claims. In anexample, the structure 400 is configured on a bulk substrate member 410,including a surface region. In an example, the single crystal piezomaterial epitaxial 420 is formed using a growth process. The growthprocess can include chemical vapor deposition, molecular beam epitaxialgrowth, or other techniques overlying the surface of the substrate. Inan example, the single crystal piezo material can include single crystalgallium nitride (GaN) material, single crystal Al(x)Ga(1-x)N where0<x<1.0 (x=“Al mole fraction”) material, single crystal aluminum nitride(AlN) material, or any of the aforementioned in combination with eachother. Of course, there can also be modifications, alternatives, andvariations. Further details of the substrate can be found throughout thepresent specification, and more particularly below.

FIG. 5 is a simplified diagram illustrating a piezo structure accordingto an alternative example of the present invention. This diagram ismerely an example, which should not unduly limit the scope of theclaims. In an example, the structure 500 is configured overlying anucleation region 530, which is overlying a surface of the substrate510. In an example, the nucleation region 530 is a layer or can bemultiple layers. The nucleation region is made using a piezo-electricmaterial in order to enable acoustic coupling in a resonator circuit. Inan example, the nucleation region is a thin piezo-electric nucleationlayer, which may range from about 0 to 100 nm in thickness, may be usedto initiate growth of single crystal piezo material 520 overlying thesurface of the substrate. In an example, the nucleation region can bemade using a thin SiN or AlN material, but can include variations. In anexample, the single crystal piezo material has a thickness that canrange from 0.2 um to 20 um, although there can be variations. In anexample, the piezo material that has a thickness of about 2 um istypical for 2 GHz acoustic resonator device. Further details of thesubstrate can be found throughout the present specification, and moreparticularly below.

FIG. 6 is a simplified diagram illustrating a piezo structure accordingto an alternative example of the present invention. This diagram ismerely an example, which should not unduly limit the scope of theclaims. In an example, the structure 600 is configured using a GaN piezomaterial 620. In an example, each of the regions are single crystal orsubstantially single crystal. In an example, the structure is providedusing a thin AlN or SiN piezo nucleation region 630, which can be alayer or layers. In an example, the region is unintentional doped (UID)and is provided to strain compensate GaN on the surface region of thesubstrate 610. In an example, the nucleation region has an overlying GaNsingle crystal piezo region (having Nd—Na: between 10¹⁴/cm3 and10¹⁸/cm3), and a thickness ranging between 1.0 um and 10 um, althoughthere can be variations. Further details of the substrate can be foundthroughout the present specification, and more particularly below.

FIG. 7 is a simplified diagram illustrating a piezo structure accordingto an alternative example of the present invention. This diagram ismerely an example, which should not unduly limit the scope of theclaims. As shown, the structure 700 is configured using an AlN piezomaterial 720. Each of the regions is single-crystal or substantiallysingle crystal. In an example, the structure is provided using a thinAlN or SiN piezo nucleation region 730, which can be a layer or layers.In an example, the region is unintentional doped (UID) and is providedto strain compensate AlN on the surface region of the substrate 710. Inan example, the nucleation region has an overlying AlN single crystalpiezo region (having Nd—Na: between 10¹⁴/cm3 and 10¹⁸/cm3), and athickness ranging between 1.0 um and 10 um, although there can bevariations. Further details of the substrate can be found throughout thepresent specification, and more particularly below.

FIG. 8 is a simplified diagram illustrating a piezo structure accordingto an alternative example of the present invention. This diagram ismerely an example, which should not unduly limit the scope of theclaims. As shown, the structure 800 is configured using an AlGaN piezomaterial 820. Each of the regions is single-crystal or substantiallysingle crystal. In an example, the structure is provided using a thinAlN or SiN piezo nucleation region 830, which can be a layer or layers.In an example, the region is unintentional doped (UID) and is providedto strain compensate AlN on the surface region of the substrate 810. Inan example, the AlGaN single crystal piezo layer where Al(x)Ga(1-x)N hasAl mole composition 0<x<1.0, (Nd—Na: between 10¹⁴/cm3 and 10¹⁸/cm3), athickness ranging between 1 um and 10 um, among other features. Furtherdetails of the substrate can be found throughout the presentspecification, and more particularly below.

FIG. 9 is a simplified diagram illustrating a piezo structure accordingto an alternative example of the present invention. This diagram ismerely an example, which should not unduly limit the scope of theclaims. The structure 900 is configured using an AlN/AlGaN piezomaterial 920. Each of the regions is single-crystal or substantiallysingle crystal. In an example, the structure is provided using a thinAlN or SiN piezo nucleation region 930, which can be a layer or layers.In an example, the region is unintentional doped (UID) and is providedto strain compensate AlN on the surface region of the substrate 910. Inan example, one or more alternating stacks are formed overlying thenucleation region. In an example, the stack includes AlGaN/AlN singlecrystal piezo layer where Al(x)Ga(1-x)N has Al mole composition 0<x<1.0;(Nd—Na: between 10^(14/)cm3 and 1018/cm3), a thickness ranging between1.0 um and 10 um; a AlN (1 nm<thickness<30 nm) serves to straincompensate lattice and allow thicker AlGaN piezo layer. In an example,the final single crystal piezo layer is AlGaN. In an example, thestructure has a total stack thickness of at least 1 um and less than 10um, among others. Further details of the substrate can be foundthroughout the present specification, and more particularly below.

FIG. 10 is a simplified diagram illustrating a piezo structure accordingto an alternative example of the present invention. This diagram ismerely an example, which should not unduly limit the scope of theclaims. As shown, the structure 1000 has an optional GaN piezo-electriccap layer or layers 1040. In an example, the cap layer 1040 or regioncan be configured on any of the aforementioned examples, among others.In an example, the cap region can include at least one or more benefits.Such benefits include improved electro-acoustic coupling from topsidemetal (electrode 1) into piezo material, reduced, surface oxidation,improved manufacturing, among others. In an example, the GaN cap regionhas a thickness ranging between 1 nm-10 nm, and has Nd—Na: between10¹⁴/cm3 and 10¹⁸/cm3, although there can be variations. Further detailsof the substrate can be found throughout the present specification, andmore particularly below.

FIG. 11 is a simplified diagram of a substrate member according to anexample of the present invention. This diagram is merely an example,which should not unduly limit the scope of the claims. In an example,the single crystal acoustic resonator material 1120 can be a singlecrystal piezo material epitaxial grown (using CVD or MBE technique) on asubstrate 1110. The substrate 1110 can be a bulk substrate, a composite,or other member. The bulk substrate 1110 is preferably gallium nitride(GaN), silicon carbide (SiC), silicon (Si), sapphire (Al2O3), aluminumnitride (AlN), combinations thereof, and the like.

FIG. 12 is a simplified diagram of a substrate member according to anexample of the present invention. This diagram is merely an example,which should not unduly limit the scope of the claims. In an example,the single crystal acoustic resonator material 1220 can be a singlecrystal piezo material epitaxial grown (using CVD or MBE technique) on asubstrate 1210. The substrate 1210 can be a bulk substrate, a composite,or other member. The bulk substrate 1210 is preferably gallium nitride(GaN), silicon carbide (SiC), silicon (Si), sapphire (Al2O3), aluminumnitride (AlN), combinations thereof, and the like. In an example, thesurface region of the substrate is bare and exposed crystallinematerial.

FIG. 13 is a simplified table illustrating features of a conventionalfilter compared against the present examples according to examples ofthe present invention. As shown, the specifications of the “PresentExample” versus a “Conventional”embodiment are shown with respect to thecriteria under “Filter Solution”.

In an example, the GaN, SiC and Al2O3 orientation is c-axis in order toimprove or even maximize a polarization field in the piezo-electricmaterial. In an example, the silicon substrate orientation is <111>orientation for same or similar reason. In an example, the substrate canbe off-cut or offset. While c-axis or <111> is nominal orientation, anoffcut angle between +/−1.5 degrees may be selected for one or more ofthe following reasons: (1) controllability of process; (2) maximizationof K2 of acoustic resonator, and other reasons. In an example, thesubstrate is grown on a face, such as a growth face. A Ga-face ispreferred growth surface (due to more mature process). In an example,the substrate has a substrate resistivity that is greater than 104ohm-cm, although there can be variations. In an example, the substratethickness ranges 100 um to 1 mm at the time of growth of single crystalpiezo deposition material. Of course, there can be variations,modifications, and alternatives.

As used herein, the terms “first” “second” “third” and “nth” shall beinterpreted under ordinary meaning. Such terms, alone or together, donot necessarily imply order, unless understood that way by one ofordinary skill in the art. Additionally, the terms “top” and “bottom”may not have a meaning in reference to a direction of gravity, whileshould be interpreted under ordinary meaning. These terms shall notunduly limit the scope of the claims herein.

As used herein, the term substrate is associated with Group III-nitridebased materials including GaN, InGaN, AlGaN, or other Group IIIcontaining alloys or compositions that are used as starting materials,or AlN or the like. Such starting materials include polar GaN substrates(i.e., substrate where the largest area surface is nominally an (h k 1)plane wherein h=k=0, and 1 is non-zero), non-polar GaN substrates (i.e.,substrate material where the largest area surface is oriented at anangle ranging from about 80-100 degrees from the polar orientationdescribed above towards an (h k 1) plane wherein 1=0, and at least oneof h and k is non-zero) or semi-polar GaN substrates (i.e., substratematerial where the largest area surface is oriented at an angle rangingfrom about +0.1 to 80 degrees or 110-179.9 degrees from the polarorientation described above towards an (h k 1) plane wherein 1=0, and atleast one of h and k is non-zero).

As shown, the present device can be enclosed in a suitable package.

While the above is a full description of the specific embodiments,various modifications, alternative constructions and equivalents may beused. As an example, the packaged device can include any combination ofelements described above, as well as outside of the presentspecification. As used herein, the term “substrate” can mean the bulksubstrate or can include overlying growth structures such as a galliumand nitrogen containing epitaxial region, or functional regions,combinations, and the like. Therefore, the above description andillustrations should not be taken as limiting the scope of the presentinvention which is defined by the appended claims.

What is claimed is:
 1. A method for fabricating a single crystalacoustic electronic device the method comprising: providing a substratehaving a via cavity formed through a portion of the substrate, thesubstrate having a surface region and a backside surface region; forminga first electrode material coupled to a portion of the backside surfaceregion and spatially configured within the via cavity; forming a singlecrystal capacitor dielectric material having a thickness of greater than0.4 microns and overlying the via cavity and coupled to the firstelectrode material through the via cavity, the single crystal capacitordielectric material being characterized by a dislocation density of lessthan 10¹² defects/cm²; and forming a second electrode material overlyingthe single crystal capacitor dielectric material.
 2. The method of claim1 wherein the single crystal capacitor material is selected from atleast one of AlN, AlGaN, InN, BN, or other group III nitrides.
 3. Themethod of claim 1 wherein the single crystal capacitor material isselected from at least one of a single crystal oxide including a high Kdielectric, ZnO, or MgO.
 4. The method of claim 1 wherein the singlecrystal capacitor dielectric material is characterized by a surfaceregion of at least 200 micron by 200 micron.
 5. The method of claim 1wherein the single crystal capacitor dielectric material is configuredin a first strain state to compensate to the substrate; wherein thesingle crystal capacitor dielectric material is deposited overlying theexposed portion of the substrate.
 6. A method of fabricating a singlecrystal acoustic electronic device, the method comprising: providing asubstrate having a via cavity formed through a portion of the substrate,the substrate having a surface region and a backside surface region;forming a first electrode material coupled to a portion of the backsidesurface region and spatially configured within the via cavity to form avia structure within a portion of the substrate; forming a singlecrystal capacitor dielectric material having a thickness of greater than0.4 microns and overlying the via cavity and coupled to the firstelectrode material through the via cavity, the single crystal capacitordielectric material being characterized by a dislocation density of lessthan 10¹² defects/cm²; and forming a second electrode material overlyingthe single crystal capacitor dielectric material.
 7. The method of claim6 wherein the surface region is configured in an off-set angle.
 8. Themethod of claim 6 further comprising a reflector region configured tothe first electrode material.
 9. The method of claim 6 furthercomprising a reflector region configured to the second electrodematerial; wherein each of the first electrode material and the secondelectrode material is selected from a refractory metal.
 10. The methodof claim 6 wherein the each of the first electrode material and thesecond electrode material is selected from one of tantalum ormolybdenum.
 11. The method of claim 6 wherein the first electrodematerial and the single crystal capacitor dielectric material comprisesa first interface region substantially free from an oxide bearingmaterial.
 12. The method of claim 6 wherein the first electrode materialand the single crystal capacitor dielectric material comprises a secondinterface region substantially free from an oxide bearing material. 13.The method of claim 6 further comprising a nucleation material providedbetween the single crystal capacitor dielectric material and the firstelectrode material; and further comprising a capping material providedbetween the single crystal capacitor dielectric material and the secondelectrode material.
 14. The method of claim 6 wherein the single crystalcapacitor dielectric material is characterized by a FWHM of less thanone degree; and further comprising a parameter derived from a two portanalysis.
 15. The method of claim 6 wherein the first electrode materialcomprises a first electrode structure configured and routed to avicinity of a plane parallel to a contact region coupled to the secondelectrode material.
 16. The method of claim 6 wherein the surface regionof the substrate is bare and exposed crystalline material.
 17. Themethod of claim 6 wherein the single crystal capacitor dielectric isconfigured to propagate a longitudinal signal at an acoustic velocity of6000 meters/second and greater; and further comprising a first contactcoupled to the first electrode material and a second contact coupled tothe second electrode material such that each of the first contact andthe second contact are configured in a co-planar arrangement.
 18. Themethod of claim 6 wherein the semiconductor substrate is selected from asilicon, a gallium arsenide, gallium nitride, aluminum nitride, analuminum oxide, or others.
 19. A single crystal acoustic electronicdevice comprising: a substrate, the substrate having a surface regionand a backside surface region; a via cavity through a portion of thesubstrate; a single crystal capacitor dielectric material having athickness of greater than 0.4 microns and overlying the via cavity, thesingle crystal capacitor dielectric material being characterized by adislocation density of less than 10¹² defects/ cm²; a first electrodematerial coupled to the single crystal capacitor dielectric materialthrough the via cavity, the first electrode material being coupled to aportion of the backside surface region and spatially configured withinthe via cavity; and a second electrode material overlying the singlecrystal capacitor dielectric material; a nucleating material overlyingthe surface region; and a thickness of the single crystal capacitordielectric overlying the nucleating material.
 20. (Allowed) The deviceof claim 19 wherein the single crystal capacitor material is selectedfrom at least one of AlN, AlGaN, InN, BN, or other group III nitrides.21. The device of claim 19 wherein the single crystal capacitor materialis selected from at least one of a single crystal oxide including a highK dielectric, ZnO, or MgO.
 22. The device of claim 19 wherein the singlecrystal capacitor dielectric material is characterized by a surfaceregion of at least 200 micron by 200 micron.
 23. The device of claim 19wherein the single crystal capacitor dielectric material is configuredin a first strain state to compensate to the substrate.
 24. A singlecrystal acoustic electronic device comprising: a substrate, thesubstrate having a surface region and a backside surface region; a viacavity through a portion of the substrate; a single crystal capacitordielectric material having a thickness of greater than 0.4 microns andoverlying the via cavity, the single crystal capacitor dielectricmaterial being characterized by a dislocation density of less than 10¹²defects/cm²; a first electrode material coupled to the single crystalcapacitor dielectric material through the via cavity, the firstelectrode material being coupled to a portion of the backside surfaceregion and spatially configured within the via cavity; and a secondelectrode material overlying the single crystal capacitor dielectricmaterial.
 25. A device of fabricating a single crystal acousticelectronic device comprising: a substrate, the substrate having asurface region and a backside surface region; a via cavity through aportion of the substrate; a single crystal capacitor dielectric materialhaving a thickness of greater than 0.4 microns and overlying the viacavity, the single crystal capacitor dielectric material beingcharacterized by a dislocation density of less than 10¹² defects/cm²; afirst electrode material coupled to the single crystal capacitordielectric material through the via cavity, the first electrode materialbeing coupled to a portion of the backside surface region and spatiallyconfigured within the via cavity to form a via structure within aportion of the substrate; and a second electrode material overlying thesingle crystal capacitor dielectric material.
 26. The device of claim 25wherein the surface region is configured in an off-set angle.
 27. Thedevice of claim 25 further comprising a reflector region configured tothe first electrode material.
 28. The device of claim 25 furthercomprising a reflector region configured to the second electrodematerial.
 29. The device of claim 25 wherein each of the first electrodematerial and the second electrode material is selected from a refractorymetal.
 30. The device of claim 25 wherein the each of the firstelectrode material and the second electrode material is selected fromone of tantalum or molybdenum.
 31. The device of claim 25 wherein thefirst electrode material and the single crystal capacitor dielectricmaterial comprises a first interface region substantially free from anoxide bearing material.
 32. The device of claim 25 wherein the firstelectrode material and the single crystal capacitor dielectric materialcomprises a second interface region substantially free from an oxidebearing material.
 33. The device of claim 25 further comprising anucleation material provided between the single crystal capacitordielectric material and the first electrode material.
 34. The device ofclaim 25 further comprising a capping material provided between thesingle crystal capacitor dielectric material and the second electrodematerial.
 35. The device of claim 25 wherein the single crystalcapacitor dielectric material is characterized by a FWHM of less thanone degree.
 36. The device of claim 25 further comprising a parameterderived from a two port analysis.
 37. The device of claim 25 wherein thefirst electrode material comprises a first electrode structureconfigured and routed to a vicinity of a plane parallel to a contactregion coupled to the second electrode material.
 38. The device of claim25 wherein the surface region of the substrate is bare and exposedcrystalline material.
 39. The device of claim 25 wherein the singlecrystal capacitor dielectric is configured to propagate a longitudinalsignal at an acoustic velocity of 6000 meters/second and greater. 40.The device of claim 25 wherein the forming of the single crystalcapacitor dielectric is deposited at a temperature ranging from 400Degrees Celsius to 1200 Degrees Celsius.
 41. The device of claim 25wherein the single crystal capacitor dielectric comprising a surfaceroughness of 2 nm and less, RMS by atomic force microscopy.
 42. Thedevice of claim 25 wherein the substrate is selected from a silicon, agallium arsenide, an aluminum oxide, or others.